Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs
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چکیده
منابع مشابه
Tantalum silicide Schottky contacts to GaAs
Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temper...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1997
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.366371